II-VI unveils 100Gb/s InP DMLs for data centre transceivers

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II‐VI has introduced a range of 100Gb/s indium phosphide (InP) directly modulated lasers (DMLs) for high-speed transceivers deployed in data centres.

The growing demand for 400 and 800 gigabit Ethernet (GbE) transceivers is driving investments in technology advancements of DMLs due to their lower cost and lower power consumption compared to electro-absorption modulated lasers (EMLs) currently used in these high-speed transceivers. II-VI’s 100 Gb/s DMLs have the ability to achieve state-of-the-art modulation speed and signal quality at high output power and low power consumption. 

They are built on the company's recognised InP technology platform. The low power consumption of II-VI’s DMLs and their design for non-hermetic packaging are ideal features for today’s pluggable form factors and tomorrow’s co-packaged solutions.   

Charlie Roxlo, vice president, indium phosphide devices business unit said: ‘The technology embedded in these directly modulated lasers is so advanced that our early results were published in the journal Nature Photonics in January of 2021. This breakthrough performance was achieved thanks to multiyear R&D investments and deep expertise across a broad internal multidisciplinary team of semiconductor laser physicists, high-speed RF analog integrated circuit designers, and transceiver experts.’

II-VI will showcase its portfolio of optical communications products virtually at OFC 2021, from 6-11 June.

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