Imec achieves record-breaking GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Cross-sectional TEM image of the gate structure in imec’sGaN-on-silicon transistor. The image shows the finely etched gate region that enables the device’s e-mode operation.
Credit: imec
Improved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors
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