PRODUCT

GlobalFoundries demonstrates 112G SerDes function

GlobalFoundries has demonstrated a 112Gbps SerDes capability, which provides a building block for the next generation of silicon used in cloud computing, hyperscale data centre, and networking applications. Enabling 112G connectivity will allow customers to double chip bandwidth in their next generation products.

The 112G SerDes targets 25dB+ insertion loss for interconnects and can support several multi-level signalling schemes. Flexibility has been built into the design so that customers can analyse the effectiveness of a variety of forward error correction (FEC) schemes.

GlobalFoundries said it has demonstrated its ability to deliver a true long-reach SerDes function by developing a 56G PAM4 signal on the company’s 14nm FinFET process. It is shipping development boards to customers, who are presently designing the 56G SerDes cores into their advanced ASICs made in GlobalFoundries’ 14LPP 14nm FinFET and 7mn 7LP process technologies.

The experience from this effort is being used to develop the company’s 112G SerDes cores in the new FX-7 ASIC design environment, which will also be built on 7LP, the foundry’s leading-edge 7nm FinFET platform. The higher semiconductor process node enables high-speed connectivity and low-power consumption.

“GF’s demonstration of 112Gbps SerDes architecture establishes the capability of running extremely high, next-generation interconnect technology that can deliver long-reach capabilities to data centre and enterprise applications,” said Mike Cadigan, senior vice president of global sales and business development at GlobalFoundries. “As a result, our customers will soon have access to design best-in-class ASIC solutions to meet the explosive bandwidth growth in data centre and networking applications as the industry transitions to a new era of connected intelligence.”

The company’s High Speed SerDes (HSS) solutions include architectures for to 16G, 30G, 56G, and 112G SerDes IP cores.

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